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Effect of Stress on the Performance of Silicon Solar Cell

K. Santhosh kumar, R. Srinivasan

In this paper the effect of stress on the performance of silicon solar cell (photovoltaic device) is studied using TCAD simulations. The solar cell performance metrics such as open circuit voltage and short circuit current are studied for various stress levels. It was observed that the compressive stress enhances the open circuit voltage, whereas tensile stress improves the short circuit current through mobility change. It is also observed that the impact of tensile stress on life time enhances both the open circuit voltage and short circuit current.

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学术钥匙
研究圣经
引用因子
宇宙IF
参考搜索
哈姆达大学
世界科学期刊目录
学者指导
国际创新期刊影响因子(IIJIF)
国际组织研究所 (I2OR)
宇宙

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