抽象的

Dimensional Analysis of GaAs Based Double Barrier Resonant Tunnelling Diode

Vivek Sharma, Raminder Preet Pal Singh

In this paper, two different structural layouts of resonant tunnelling diodes (RTD) are simulated to study the effect of their different output parameters. Both the structures exhibit double barriers and the material used is Gallium Arsenide (GaAs). The output results are evaluated and the effect of their conduction band, VI characteristics, resonant energy and transmission coefficients is studied. The performance of these structures makes use of the quantum mechanical tunnelling. Both the designs of double barrier RTD’s shows some interesting results in almost every aspect of the evaluated parameters.